SnSxSe2-x单晶纳米片的可控制备与表征

锡二硫族化合物可以通过改变硫和硒的含量来连续调控三元合金材料的带隙、载流子浓度等物理化学性质,在电子和光电子器件应用上具有巨大的潜力。本文采用化学气相沉积(CVD)技术可控地制备了不同元素组分的SnS_xSe_2-x(x=0,0.2,0.5,0.8,1.0,1.2,1.5,1.8,2.0)单晶纳米片。采用扫描电子显微镜(SEM)、原子力显微镜(AFM)、能量色散X射线光谱(EDS)、透射电子显微镜(TEM)以及拉曼光谱等手段对SnS_xSe_2-x纳米片进行了综合表征。结果表明本方法成功实现了元素百分比可调的SnS_xSe_2-x单晶纳米片的可控制备。重点研究了依赖于元素百分比的SnS_xSe_2-x的拉曼特征谱,实验结果与基于密度泛函理论(DFT)的第一性原理计算得到的SnS_xSe_2-x的拉曼仿真谱高度吻合,理论计算结果较好地诠释了实验拉曼光谱发生变化的原因。本研究提供了一种元素百分比可调的三元SnS_xSe_2-x单晶纳米片的可控制备方法,同时对锡二硫族化合物的明确、无损识别提供了方案。     

单层MXene纳米片Ti2N电磁特性的过渡金属(Sc、V、Zr)掺杂效应

二维材料MXene纳米片由于具有较大的比表面积和较高的电子迁移率而受到广泛的关注。本文采用基于密度泛函理论的第一性原理计算,对单层MXene纳米片Ti₂N电磁特性的过渡金属(Sc、V、Zr)掺杂效应进行了系统研究。结果表明,所有过渡金属掺杂体系结合能均为负值,结构均稳定;其中Ti₂N-Sc体系的形成能为-2.242 eV,结构更易形成,且保持稳定;掺杂后Ti₂N-Sc、Ti₂N-Zr体系磁矩增大;此外,Ti₂N-Sc体系中保留了较高的自旋极化率,达到84.9%,可预测该体系在自旋电子学中具有潜在的应用价值。     

Singular soliton,shock-wave,breather-stripe soliton,hybrid solutions and numerical simulations for a (2+1)-dimensional Caudrey–Dodd–Gibbon–Kotera–Sawada system in fluid mechanics

Nonlinear Dynamics - In this paper, a (2+1)-dimensional Caudrey–Dodd–Gibbon–Kotera–Sawada system is investigated in fluid mechanics via the symbolic computation. With the...     

Geometrically nonlinear dynamic analysis of the stiffened perovskite solar cell subjected to biaxial velocity impacts

Nonlinear Dynamics - The perovskite solar cell (PSC) is one of the most promising photovoltaic candidates along with the highly increasing demand for green electricity. One of the main concerns...     

Asymptotic Behavior of Least Energy Solutions for a Fractional Laplacian Eigenvalue Problem on ℝN

Acta Mathematica Sinica, English Series - We are interested in the existence and asymptotic behavior for the least energy solutions of the following fractional eigenvalue problem $$\left({\rm{P}}...     

High-performance nonfused ring electron acceptor with a steric hindrance induced planar molecular backbone

Three nonfused ring electron acceptors (NFREAs) TTC6,TT-C8T and TT-TC8 were purposefully designed and synthesized.The molecular geometry can be adjusted by the steric hindrance of lateral substituents.According to the DFT calculations,from TTC6 to TT-C8T and TT-TC8,planarity of the molecular backbone is gradually improved,accompanying with the enhancing of intramolecular charge transfer effect.As for TT-TC8,the two phenyl substituents are almost perpendicular to the molecular backbone,which endues the acceptor with good solubility and suppresses it to form over-aggregation.Multidirectional regular molecular orientation and closer molecular stacking are formed in TT-TC8 film.As a result,TT-TC8 based devices afford the highest PCE of 13.13%,which is much higher than that of TTC6 (4.41%) and TT-C8T (10.42%) and among the highest PCE values based on NFREAs.     

Terahertz Dual-Band Near-Zero Effective Index Metamaterial Based on Double-Sided Metal Microstructure

Journal of Russian Laser Research - The zero-refractive-index metamaterials have excellent electromagnetic properties, which provide new ideas and methods to realize the control of electromagnetic...     

基于摩擦磨损的KDP晶体固结磨料抛光垫优化

本文通过固结磨料球与KDP晶体对磨的单因素试验探究固结磨料球中反应物种类、磨粒浓度、反应物浓度、基体硬度对摩擦系数、磨痕截面积和磨痕处粗糙度的影响,试验结果表明:KHCO₃固结磨料球对磨后磨痕对称性好,磨痕处的粗糙度值低;磨痕截面积随磨粒和反应物浓度的增加而增大,随基体硬度的增大而降低;磨痕处粗糙度随磨粒和反应物浓度的增加先降低后上升,随基体硬度的增大先上升后降低;摩擦系数受磨粒和反应物浓度影响不明显,随基体硬度的增大而降低。选择KHCO₃作为反应物,Ⅰ基体,磨粒浓度为基体质量的100%,反应物浓度为15%制备固结磨料球与KDP晶体对磨后的磨痕轮廓对称度好且磨痕处粗糙度值低,以该组分制备固结磨料垫干式抛光KDP晶体,可实现晶体表面粗糙度Sa值为18.50 nm,材料去除率为130 nm/min的高效精密加工。